Effective Electron Mass in Low-Dimensional Semiconductors by Sitangshu Bhattacharya

By Sitangshu Bhattacharya

This publication offers with the powerful Electron Mass (EEM) in low dimensional semiconductors. The fabrics thought of are quantum constrained non-linear optical, III-V, II-VI, hole, Ge, PtSb2, zero-gap, under pressure, Bismuth, carbon nanotubes, GaSb, IV-VI, Te, II-V, Bi2Te3, Sb, III-V, II-VI, IV-VI semiconductors and quantized III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and potent mass superlattices. The presence of extreme electrical box and the sunshine waves swap the band constitution of optoelectronic semiconductors in basic methods, that have additionally been included within the research of the EEM in quantized constructions of optoelectronic compounds that regulate the reports of the quantum influence units below powerful fields. the significance of size of band hole in optoelectronic fabrics below robust electrical box and exterior picture excitation has additionally been mentioned during this context. The effect of crossed electrical and quantizing magnetic fields at the EEM and the EEM in seriously doped semiconductors and their nanostructures is mentioned. This publication includes two hundred open examine difficulties which shape the quintessential a part of the textual content and are beneficial for either Ph. D aspirants and researchers within the fields of solid-state sciences, fabrics technological know-how, nanoscience and know-how and allied fields as well as the graduate classes in glossy semiconductor nanostructures.
The publication is written for submit graduate scholars, researchers and engineers, pros within the fields of sturdy kingdom sciences, fabrics technology, nanoscience and know-how, nanostructured fabrics and condensed topic physics.

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Extra resources for Effective Electron Mass in Low-Dimensional Semiconductors

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57) n z =1 where, θ1 (E Fs , n z ) ≡ and θ2 (E Fs , n z ) ≡ R1 (E Fs , n z )[a 2 (E Fs , n z ) + b2 (E Fs , n z )]1/2 π × a 2 (E Fs , n z )F , l(E Fs , n z ) − [a 2 (E Fs , n z ) 2 π − b2 (E Fs , n z )]F , l(E Fs , n z ) 2 s r =1 L(r )[θ1 (E Fs , n z )]. 58) 2m 3 M2 2 in which θ0 (E) ≡ [1 + α E(1 − γ0 ) + δ 0 ], γ0 ≡ m , δ0 ≡ M and the other M2 2 notations are defined in [152]. 61) Therefore, the effective mass in UFs of Bi in accordance with Hybrid model is a function of Fermi energy and the size quantum number due to the presence of band nonparabolicity only.

100) where P 2 (E, n z ) = [1 − [n z π/dz c¯0 (E)]2 ]. 101) E=E Fs in which, θ6 (E, n z ) = 2P(E, n z ){P(E, n z )} a¯ 0 (E)b¯0 (E) + {P(E, n z )}2 {a¯ 0 (E)} b¯0 (E) +{P(E, n z )}2 {b¯0 (E)} a¯ 0 (E) The EEM in this case is the function of Fermi energy and the size quantization number due to the presence of stress only. 104) 30 1 The EEM in Ultrathin Films (UFs) of Nonparabolic Semiconductors where T61 (E Fs , n z ) ≡ [P 2 (E Fs , n z )a¯ 0 (E Fs )b¯0 (E Fs )] s and T62 (E Fs , n z ) ≡ L(r )T61 (E Fs , n z ).

It appears from these figures that the Fermi level mass is significantly influenced by the effects of size quantization particularly in tetragonal semiconductors like n- Cd3 As2 having crystalline field effects and energy-dependent anisotropy of the effective mass. It has been found that the effective mass at the Fermi level depends on the size quantum number due to the combined influence of crystal-field splitting and the anisotropic spin-orbit splitting constant, resulting in different effective masses at the Fermi level corresponding to different electric subbands (the different effective masses being the same in the absence of field splitting as can be seen from Fig.

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